吴汪然简介

发布者:田绍鹏发布时间:2020-06-12浏览次数:2413

个 人 简 历

  

基本资料

姓名:吴汪然

性别:男

出生年月:19886

职称:副教授

学历:博士

职务:无

联系电话:025-83795811

Email:wrwu@seu.edu.cn

个人简历


吴汪然,副教授,硕士生导师。主持国家自然科学基金、江苏省自然科学基金、江苏省产业前瞻技术项目等项目。在IEEE Electron Device LettersIEEE Trans. on Electron DevicesApplied Physics Letters等国际权威期刊发表SCI论文31篇(其中第一作者10篇),在IEDMSymp. on VLSIIRPSISPSD等国际会议发表论文15篇(其中第一作者8篇)。目前是IEEE IPFA国际会议TPC MemberIEEE TEDIEEE EDL等国际期刊审稿人。



【 研究方向


主要从事功率半导体器件与柔性薄膜晶体管的设计、可靠性及模型等方面的研究工作。


研究成果


1.Wangran Wu, Guangan Yang, Yaohui Wang, Long Zhang, Siyang Liu, Jing Zhu, and Weifeng Sun, “Experimental Investigation on the Electrical Properties of Lateral IGBT Under Mechanical Strain”, IEEE Electron Device Letters, 40, No. 6, 2019.

2.Wangran Wu, Heng Wu, Jingyun Zhang, Mengwei Si, Yi Zhao, Peide D. Ye, “Carrier Mobility Enhancement by Applying Back-Gate Bias in Ge-on-Insulator MOSFETs”, IEEE Electron Device Letters, 39, No. 2, 2018.

3.Wangran Wu, Chang Liu, Jiabao Sun, Wenjie Yu, Xi Wang, Yi Shi, and Yi Zhao, “Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strains”, IEEE Electron Device Letters, 35, No. 7, Jul. 2014.

4.Wangran Wu, Yaohui Wang, Guangan Yang, Siyang Liu, Jing Zhu, and Weifeng Sun, “Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain”, IEEE Trans. Electron Devices, 66, No. 2, Apr. 2019.

5.Wangran Wu, Heng Wu, Weifeng Sun , Mengwei Si , Nathan Conrad, Yi Zhao, and Peide D. Ye, “Mobility Fluctuation-Induced Low-Frequency Noise in Ultrascaled Ge Nanowire nMOSFETs With Near-Ballistic Transport”, IEEE Trans. Electron Devices, 65, No. 6, Apr. 2018.

6.Wangran Wu, Xiangdong Li, Jiabao Sun, Rui Zhang, Yi Shi and Yi Zhao, “Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric Fields”, IEEE Trans. Electron Devices, 62, No. 4, Apr. 2015.

7.Wangran Wu, Yu Pu, Jiabao Sun, Yi Zhao, Xiangming Xu, and Yi Shi, “Mechanical strain altered gate and substrate currents in n and p-channel MOSFETs”, Appl. Phys. Lett., 101, 053507, Aug. 2012.

8.Wangran Wu, Yu Pu, Junzhuang Wang, Xiangming Xu, Jiabao Sun, Zhe Yuan, Yi Shi, and Yi Zhao, “Comparative study on strain induced electrical properties modulation of Si p-n junctions”, Appl. Phys. Lett., 102, 093502, Mar. 2013.

9.Wangran Wu , Zejie Zheng, Weifeng Sun, Shun Xu, Junkang Li, Rui Zhang, and Yi Zhao, Comparative investigation into the interface passivation of Ge n- and p-MOSFETs with various 2D materials, Applied Physics Express, 2019.  

10.Wangran Wu, J. Lu, Chang Liu, Heng Wu, Xiaoyu Tang, Jiabao Sun, Rui Zhang, Wenjie Yu, Xi Wang and Yi Zhao, “Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs”, Microelectronics Reliability, 62, pp. 79–81, Jul. 2016.