李力一简介

发布者:谭乔元发布时间:2022-04-14浏览次数:10

个 人 简 历

  

基本资料

·姓名: 李力一

·性别: 男

·出生年月:1989.01

·民族: 汉

·职称: 研究员

·学历: 博士

·职务:

·联系电话:18052023621

·E- mail liyi_li@seu.edu.cn

个人简历

于北京大学化学专业取得学士学位,美国佐治亚理工学院材料科学与工程专业取得博士学位,师从现代电子封装技术开拓者、美国工程院院士C.P. Wong教授,发明超高深宽比高均一度硅深刻蚀技术,发表SCI论文44篇,授权美国专利1篇,IEEEECTC会议论文10余篇。在美国Intel公司TMG Lab担任材料分析和失效分析高级工程师,工作五年,开展了薄膜力学、失效分析和分子结构分析等研究,负责三维封装项目Foveros研发并推动成功量产。获得国家高层次人才青年学者,东南大学青年首席教授,紫金青年学者A类。

【 研究方向

参照国际半导体技术路线图IRDS与国家重大需求,发展面向下一代集成电路制造的新工艺、新材料及相应表征技术,理解材料结构-性能关系和失效机理,搭建特色加工和检测设备,包括:

-三维封装工艺与材料:硅通孔,微凸点,铜-氧化硅混合键合;

-深硅刻蚀特色工艺:微纳深孔、深槽和斜孔、弯孔加工;

-MEMS、微流、光学器件加工;

-图形化工艺与材料:自组装高分子,光刻胶

-互连工艺与材料:low-k介电层,导电材料,扩散阻挡层;

-失效分析:薄膜与微纳结构的力学分析,界面分析,分子结构分析。

研究成果

代表期刊论文:

1.      Yi, H.; Zhao, J.; Huang, Y.; Zhu, G.; Mei, Y.; Li, Z.; Li, L.*, Formation of Graphene–Silicon Junction by Room Temperature Reduction with Simultaneous Defects Removal. IEEE Trans. Electron Devices. 2021,68 (2), 873-878.

2.      Li, L.; Tuan, C.-C.; Zhang, C.; Chen, Y.; Lian, G.; Wong, C. P. Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon. IEEE J. Microelectromech. Syst. 201928, 143.

3.      Li, L.; Zhang, C.; Tuan, C.-C.; Chen, Y.; Wong, C. P. High-Aspect-Ratio Microstructures with Versatile Slanting Angles on Silicon by Uniform Metal-assisted Chemical Etching. J. Micromech. Microeng. 201828, 055006.

4.      Li, L.; Li, B.; Zhang, C.; Tuan, C.-C.; Lin, Z.; Wong, C.-P. A facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching. J. Mater. Chem. C 2016,4, pp 8953.

5.      Li, L.; Song, B.; Maurer, L.; Lin, Z.; Lian, G.; Tuan, C.-C.; Moon, K.-S.; Wong, C.-P. Molecular engineering of aromatic amine spacers for high-performance graphene-based supercapacitors. Nano Energy 201621, pp 276.

6.      Li, L..; Zhang, G.; Wong, C. P. Formation of Through Silicon Vias in Wafer Level by Metal-assisted Chemical Etching for Silicon Interposer. IEEE Transactions on Components, Packaging and Manufacturing Technology 20155, pp 1039.

7.      Li, L.; Zhao, X.; Wong, C. P. Charge Transport in Uniform Metal-assisted Chemical Etching (UMaCE) for 3D High-Aspect Ratio Micro- and Nanofabrication on Silicon. ECS. J. Solid State Sci. Technol. 2015, 4, pp 337.

8.      Li, L.; Zhao, X.; Wong, C.-P. Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE). ACS Appl. Mater. Interfaces 20146, pp 16782.

9.      Li, L.; Liu, Y.; Zhao, X.; Lin, Z.; Wong, C.-P. Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts. ACS Appl. Mater. Interfaces 2014,6, pp 575.

授权专利:

1.      Li, L.; Wong, C.P., et al. “METAL-ASSISTED CHEMICAL ETCHING OF A SEMICONDUCTIVE SUBSTRATE WITH HIGH ASPECT RATIO, HIGH GEOMETIC UNIFORMITY, AND CONTROLLED 3D PROFILESUS”, U.S. Patent 10,134,634