2019.09-2024.07   北京大学 微电子与固体电子学 博士

2015.09-2019.07   北京师范大学 物理学 学士

2024.09-至今 东南大学集成电路学院 上岗副教授

氧化铪基FeRAM，器件设计协同优化，存内计算，感存算一体

在IEEE IEDM、EDL、IEEE TED、TED等国际高水平期刊会议发表论文27篇，以一作身份发表论文8篇，申请或授权专利9项

会议文章

• Shengjie Cao#, Zhiyuan Fu#, et al. "Comprehensive Performance Re-assessment of Hafnia-based Cross-point FeRAM with Ultra-fast and Low-power Operation from Device/Array Perspective". In 2024 International Electron Devices Meeting (IEDM)

• Zhiyuan Fu#, Shengjie Cao#, et al."First Demonstration of Hafnia-based Selector-Free FeRAM with High Disturb Immunity through Design Technology Co-Optimization". In 2023 International Electron Devices Meeting (IEDM), pp. 11.3.1-11.3.4, Dec. 2023. (Nominated as Best Student Paper)

• Zhiyuan Fu, et al. "Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation". In 2022 International Electron Devices Meeting (IEDM), pp. 24.5.1-24.5.4, Dec. 2022

• Zhiyuan Fu, et al. "New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO 2-based 1T1C FeRAM". In 2023 Silicon Nanoelectronics Workshop (SNW), pp. 55-56, Jun. 2023

• Zhiyuan Fu, et a. "Device modeling and application simulation of ferroelectric-FETS with dynamic multi-domain behavior". In 2020 China Semiconductor Technology International Conference (CSTIC), pp. 1.88.1-1.88.3, Jun. 2020.

期刊文章

• Zhiyuan Fu, et al. "Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM". IEEE Transactions on Electron Devices, Mar. 2024

• Zhiyuan Fu, et al. "Novel Asymmetric Operation Scheme for HfO 2-based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts". IEEE Electron Device Letters, vol. 45, no. 1, pp. 20-23. Jan. 2024

• Xu, Weikai#, Zhiyuan Fu#, et al. A Novel Small-Signal Ferroelectric Capacitance based Content Addressable Memory for Area-and Energy-Efficient Lifelong Learning. IEEE Electron Device Letters, vol. 45, no. 1, pp. 24-27, Jan. 2024