(1) 2011-3至2015-1, 东南大学, 微电子学与固体电子学, 博士；

(2) 2008-9至2011-2, 东南大学, 微电子学与固体电子学, 硕士；

(3) 2009-1至2010-12，法国雷恩第一大学，电子科学与技术，硕士；

(4) 2004-9至2008-6, 合肥工业大学, 微电子学, 学士

(1)2023-5至今, 东南大学, 集成电路学院, 教授, 博导；

(2)2021-4至2023-4, 东南大学, 电子科学与工程学院, 教授, 博导；

(3)2017-3至2021-3, 东南大学, 电子科学与工程学院, 副研究员, 博导；

(4) 2015-8至2016-8, 美国北卡罗莱纳州立大学, 电子科学与计算工程学院，访问学者；

(5) 2015-1至2017-2, 东南大学, 博士后；

(1)承担本科生课程《电子器件可靠性理论基础及应用》（48学时)

(2) 承担研究生课程《半导体器件物理》（36学时）

功率半导体器件设计及可靠性

(1) Siyang Liu, Xin Tong, Jiaxing Wei, Weifeng Sun, “Single-pulse Avalanche Failure Investigations of Si-SJ-MOSFET and SiC-MOSFET by Step-control Infrared Thermography Method”, IEEE Trans. on Power Electronics, 2020, 35(5), pp.5180-5189.

(2) Siyang Liu, Xin Tong, Jiaxing Wei, Weifeng Sun, “Lightning Surge Robustness Analysis and Optimization for an LED Driver Based on a Flyback Converter”, IEEE Trans. on Industrial Electronics, 2020, DOI:10.1109/TIE.2020.3031537.

(3) Siyang Liu, Sheng Li , Chi Zhang, Ningbo Li, Xinyi Tao, Weifeng Sun, “Single Pulse Unclamped-Inductive-Switching Induced Failure and Analysis for 650V p-GaN HEMT”, IEEE Trans. on Power Electronics, 2020, 35(11), pp.11328-11331.

(4) Siyang Liu, Lu Li, Ran Ye, Haibo Wu, Wangran Wu, Weifeng Sun, Shulang Ma, Boyong He, Wei Su, “Hot-carrier-induced Degradation and Optimization for 700V High-voltage Lateral DMOS by the AC Stress”, IEEE Trans. on Electron Devices, 2020, 67(3), pp.1090-1097.

(5) Siyang Liu, Hanqi Yang, Zhichao Li, Weifeng Sun, “Switch-OFF Avalanche Breakdown Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs Applications”, IEEE Trans. on Electron Devices, 2018, 65(10), pp. 4719-4723.

(6) Siyang Liu, Ran Ye, Weifeng Sun, Longxing Shi, “A Novel Lateral DMOS Transistor With H-Shape Shallow-Trench-Isolation Structure”, IEEE Trans. on Electron Devices, 2018, 65(11), pp. 5218-5221.

(7) Siyang Liu, Chao Yang, Weifeng Sun, Qingsong Qian, Yu Huang, Xing Wu, Litao Sun, “Repetitive-avalanche-induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode”, IEEE Trans. on Electron Devices, 2017, 64(8), pp. 3275-3281.

(8) Siyang Liu, Weifeng Sun, Qinsong Qian, Jiaxing Wei, Fang Jiong, Li Ting, Zhang Chi, Shi Longxing, “A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor”, IEEE Trans. on Device and Materials Reliability, 2018, 18(2), pp.298-312.

(9) Siyang Liu, Chunwei Zhang, Kaikai Xu, Weifeng Sun, “Hot-Carrier-Induced Degradations Investigations for 600V IGBT by an Improved Charge Pumping Solution”, IEEE Trans. on Electron Devices, 2017, 64(2), pp. 634-637.

(10) Siyang Liu, Sheng Li, Zhichao Li, Weifeng Sun, Wei Su, Shulang Ma, Feng Lin, Yuwei Liu, Guipeng Sun, “Lateral DMOS with Partial-Resist-Implanted Drift Region for Alleviating Hot-Carrier Effect”, IEEE Trans. on Device and Materials Reliability, 2017, 17(4), pp.780-784.

(11) Siyang Liu, Ran Ye, Weifeng Sun, Chunwei Zhang, Jiaxing Wei, Wei Su, Aijun Zhang, Shulang Ma, “Electrical Parameters Degradations and Optimizations of SOI-LIGBT Under Repetitive Unclamped Inductive Switching Conditions”, IEEE Trans. on Electron Devices, 2016, 63(4), pp.1644-1649.

(12) Siyang Liu, Chunde Gu, Jiaxing Wei, Qinsong Qian, Weifeng Sun, Alex Q. Huang, “Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs”,IEEE Trans. on Electron Devices, 2016, 63(11), pp.4331-4338.

(1) 2020年度国家技术发明二等奖（排2）；

(2) 2019年江苏省科学技术一等奖(排2);

(3) 2014年教育部技术发明一等奖(排4);

(4) 2016年首届电子学会优秀博士学位论文奖；

(5) 2016年江苏省优秀博士学位论文奖